TCAD Semiconductor Device Simulator
Quantum Corrections to Drift Diffusion simulation
Open-source TCAD for SkyWater Sky130 calibrated against measured silicon from 300 K to 77 K - drift-diffusion, dopant freeze-out, cryogenic SS saturation quantified, OpenVAF/ngspice compact-model loop
Physics-based 1D TCAD simulation of a silicon MOS capacitor with validated C-V, oxide, doping, temperature, and mesh-convergence studies.
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