device-physics

A Simple Approach for Unraveling Optoelectronic Processes in Organic Solar Cells under Short‐Circuit Conditions

This repository contains the Synopsys Sentaurus TCAD project files, scripts, and simulation setup for modeling a Dual Material Gate Junctionless FinFET (DMG-JLFET). The work includes structure creation in Sentaurus Structure Editor, implementation of suitable physical models in the device simulation (sdevice) script, and automation of performance.

SCAPS-1D simulation of a lead-free FTO/ZnSe/CdTe/Cs2BiAgI6/Ni thin-film solar cell | ten ETLs and nine back contacts screened | 27.99% simulated PCE | figures regenerated from raw exports | Best Poster ACC 2024, 2 granted patents

WSQ courseware for semiconductor device physics, wafer fabrication and process integration (TGS-2024049339).

A repository for generating layouts related to spintronics devices such as MRAM cells (MTJs), Hall bars, GSG waveguides, etc. Created by Onri Jay Benally.

Interactive p-n junction analysis lab for semiconductor physics education

MOS capacitor Poisson solver, compact MOSFET model and short-channel scaling study (bulk vs SOI vs double gate) in Python.

Educational semiconductor device physics simulator: analytic PN junction diode and MOSFET models in pure Python (NumPy + Matplotlib)

Homework Problems

Single diode photovoltaic modelling: datasheet to five parameters to I-V curve

A semiconductor engineering research portfolio featuring device physics, characterization, MOSFET parameter extraction, EDA, simulation, and MATLAB tool development.

Electronics lab experiment studying the RC circuit time constant (τ = RC) — Device Physics course.

Automated, physics-based AlGaN/GaN HEMT design-space exploration: polarization charge control, velocity-saturated Id, and a Pareto front for the Ron-vs-breakdown-voltage trade-off.

Device physics in Python: MOSFET IV models, a drift diffusion PN junction solver, CV, scaling and reliability

Open-source multiscale simulation of strain-augmented CuInP2S6/WSe2 p-type ferroelectric FETs: calibrated two-valley strained transport, multidomain Preisach + Landau-Khalatnikov CIPS model, self-consistent MFMIS electrostatics, and complementary nonvolatile logic (power-loss restore, SNM, delay, energy). Reproduces every figure of the paper.